The TIP122 belongs to a sort of npn epitaxial darlington transistor, designed for general purpose amplifier and low speed switching applications. TIP122 transistor can switch loads upto 60V with a peak current of 8A and continuous current of 5A.
international rectifier code datasheet, cross reference, circuit and application notes in pdf format.4. Attach the fan between V+ of your rectifier and the transistor collector. 5. Use a potentiometer as a variable resistor between the transistor emitter and ground. Make sure this potentiometer is set to zero ohms or as close to it as possible. 6. Turn on the power supply to energize the circuit. If you have built it correctly, the V be is ...
1N4004G Rectifiers are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 1N4004G Rectifiers.Transistors: Bipolar Junction Transistors (BJT) General configuration and definitions The transistor is the main building block "element" of electronics. It is a semiconductor device and it comes in two general types: the Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET).NTE has one of the most extensive semiconductor lines in the industry.. All NTE semiconductors are guaranteed to meet or exceed original specifications. With over 4,700 NTE devices cross referenced to 384,373 industry device numbers, we're sure you will find the item you need. 558 Quad Timer datasheet. The 558 quad timer is a single timing device that can be used to generate four independent timing functions. 558 Output absorbs current. These highly stable and general-purpose controls can be used in monostable mode to generate accurate time delays of up to several hours in microseconds.
2SC6073 Datasheet PDF - C6073 NPN Transistor - Panasonic, Circuit, Pinout, Schematic, Equivalent, Replacement, Data, Sheet, Manual and Application notes. You can ...IRFZ44N Datasheet (PDF) 1.1. irfz44n.pdf Size:100K _update INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current [email protected] TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in ...IGBT working principle Forward Blocking Mode - When positive voltage is applied on collector with gate and emitter shorted. Conduction Mode - Apply sufficient positive voltage on gate terminal.